Data
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2007-04-25 |
| Subject |
STC4539 N&P Pair Enhancement Mode MOSFET 6.8A / -6.2A. The STC4539 is the N&P-Channel enhancement |
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The STC4539 is the N&P-Channel enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage application such as notebook computer power management and other batter powered circuits, where high-side switching, low in-line power loss and resistance to transients are needed. |
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FEATURE
- N-Channel
30V/6.8A, RDS(ON)= 34mΩ@VGS = 10V
30V/5.6A, RDS(ON)= 46mΩ@VGS = 4.5V
- P-Channel
-30V/-6.2A, RDS(ON)= 60mΩ@VGS = -10V
-30V/-4.6A, RDS(ON)= 80mΩ@VGS = - 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- SOP-8 package design
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